Recent advances in doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin film based phase change memories
نویسندگان
چکیده
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves superior in the category of memory devices due to a combination their unique set properties.
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ژورنال
عنوان ژورنال: Materials advances
سال: 2023
ISSN: ['2633-5409']
DOI: https://doi.org/10.1039/d2ma01047j